Nghĩa của từ semiconductor layer bằng Tiếng Việt
@Chuyên ngành kỹ thuật
@Lĩnh vực: điện tử & viễn thông
-lớp bán dẫ
Đặt câu có từ "semiconductor layer"
1. The semiconductor layer stack (2) comprises an active layer (2a) for generating radiation.
2. One such method may include depositing a semiconductor layer (14) on a semiconductor substrate (12), depositing an adynamic diamond layer (16) on the semiconductor layer (14) opposite the semiconductor substrate (12), and coupling a support substrate (18) to the adynamic diamond layer (16) opposite the semiconductor layer (14) to support the adynamic layer.
3. A light emitting device according to the present invention includes a substrate and a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are formed on the substrate.
4. The semiconductor layer stack (3) has an active layer (3a) for producing electromagnetic radiation.
5. In the wiring structure, the semiconductor layer of a thin film transistor, and the Al alloy film directly connected with the semiconductor layer are provided on a substrate in this order from the substrate side.
6. The lateral surface of the compound semiconductor layer is removed by a digital alloy method.
7. The n-type semiconductor layer of a nitride group includes aluminum formed on the active layer.
8. The active layer of a nitride group includes aluminum formed on the p-type semiconductor layer.
9. The amorphous semiconductor layer (32) is formed on at least a part of the end edge portion (10b2).
10. Thus, crystal defects of the second conductive semiconductor layer are repaired and the activation ratio of dopant is raised.
11. The semiconductor layer stack (2) has an active layer, which is provided for producing radiation, and a radiation exit side (21).
12. The invention relates to a field effect transistor with a heterostructure, comprising a support material, which has a stress-relieved monocrystalline semiconductor layer (3) consisting of a first semiconductor material (Si), a strained monocrystalline semiconductor layer (4), which has a semiconductor alloy (GexSi1-x), a fraction x of a second semiconductor material being freely selectable.
13. A display device (1) is specified, with a semiconductor layer sequence (2) having an active region (20) provided for generating radiation and forming a plurality of pixels (2a, 2b).
14. The inventive device can be used to compensate refractive effects since the refractive index increments for the refraction-controlled semiconductor layer (7) and the optical media (3, 5, 6) have opposite algebraic signs.
15. The invention relates to a device (2) and a method for heating a substrate (28), in particular an amorphous semiconductor layer (28) such as an amorphous silicon layer (28), using a radiation beam (38) impinging on the substrate surface (30) at an angle of incidence (&egr;).
16. The present invention relates to a method for converting semiconductor layers, in particular for converting amorphous silicon layers into crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source fitted with a plasma nozzle (1).
17. The present invention relates to a method for converting semiconductor layers, in particular for converting amorphous silicon layers into crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated from a nitrogen-containing process gas and has temperatures of ≤ 3000 K.