Nghĩa của từ p-type metal oxide semiconductor transistor bằng Tiếng Việt
@Chuyên ngành kỹ thuật
@Lĩnh vực: điện lạnh
-tranzito bán dẫn oxit kim loại p
Đặt câu có từ "p-type metal oxide semiconductor transistor"
1. This power characteristic differs fundamentally from that of a metal oxide semiconductor transistor, which is capacitor-based.
2. The MOSFET (metal–oxide–semiconductor field-effect transistor) is a device that amplifies or switches electronic signals.
3. CMOS stands for Complementary Metal Oxide Semiconductor .
CMOS là viết tắt cho - chất bán dẫn ô-xít kim loại bổ sung .
4. Zinc oxide-based p-type semiconductor thin film using hydrogen, and method for manufacturing same
5. An aqueous metal etching composition useful for removal of metals such as nickel, cobalt, titanium, tungsten, and alloys thereof, after formation of metal silicides via rapid thermal annealing during complementary metal-oxide-semiconductor (CMOS) transistor fabrication.
6. P-n junction-type compoud semiconductor light-emitting diode
7. Method for manufacturing oxide semiconductor thin film transistor, and active operating display device and active operating sensor device using same
8. The n-type semiconductor (A) has constituent units represented by formula (I) and the p-type semiconductor (B) has donor-acceptor constituent units.
9. The first semiconductor logic family was resistor–transistor logic.
10. In semiconductor physics, an Acceptor is a dopant atom that when added to a semiconductor can form a p-type region
11. The surface in the p - type - type semiconductor material at which the donor and acceptor concentration are equal.
12. For Metal Oxide Varistor (MOV) type Arresters, start with MCOV rating shown below
13. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.
14. The active layer of a nitride group includes aluminum formed on the p-type semiconductor layer.
15. Zinc oxide is a semiconductor compound easy to crystallized.
16. The overall project objective was to combine CMOS (Complementary metal-oxide-semiconductor) circuitry with nanotechnological processes to develop advanced molecular sensors.
17. An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region.
18. It is a group V/VI, intrinsic p-type semiconductor and exhibits photo-induced phase-change properties.
Nó thuộc một nhóm V/VI, chất bán dẫn loại p và thể hiện các đặc tính thay đổi hình ảnh.
19. A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) are formed by patterning of a gate dielectric layer, a thin silicon layer, and a silicon-germanium alloy layer.
20. The p-type zinc oxide film has a net acceptor concentration of at least about 10?
21. Gate oxides prepared by repeated rapid thermal Annealings of the thermal oxide in N2O ambient is proposed and metal–oxide–semiconductor (MOS) capacitors with these newly proposed gate dielectrics are studied
22. The dehydrogenation catalyst composites contain alumina, lithium oxide, alkaline earth metal oxide, chromium oxide, and sodium oxide.
23. The present invention relates to a method for manufacturing an oxide semiconductor thin film transistor, and to an active operating display device and an active operating sensor device using same.
24. The invention relates to the use of currentlessly deposited ternary nickel-containing metal alloys of the type NiM-R (whereby M = Mo, W, Re, Cr and R = B, P) in semiconductor technology.
25. Gate oxides prepared by repeated rapid thermal Annealings of the thermal oxide in N 2 O ambient is proposed and metal–oxide–semiconductor (MOS) capacitors with these newly proposed gate dielectrics are studied