Nghĩa của từ floating gate avalanche injection mos transistor (famost) bằng Tiếng Việt

@Chuyên ngành kỹ thuật
@Lĩnh vực: điện tử & viễn thông
-tranzito MOS kiểu phun thác có cổng di động
@Chuyên ngành kỹ thuật
@Lĩnh vực: điện tử & viễn thông
-tranzito MOS kiểu phun thác có cổng di động

Đặt câu có từ "floating gate avalanche injection mos transistor famost"

Dưới đây là những mẫu câu có chứa từ "floating gate avalanche injection mos transistor famost", trong bộ từ điển Từ điển Anh - Việt. Chúng ta có thể tham khảo những mẫu câu này để đặt câu trong tình huống cần đặt câu với từ floating gate avalanche injection mos transistor famost, hoặc tham khảo ngữ cảnh sử dụng từ floating gate avalanche injection mos transistor famost trong bộ từ điển Từ điển Anh - Việt

1. The neural MOS transistor fully develop the floating-gate technique.

2. Drive circuitry for a mos field effect transistor

3. SOI technology results in a faster MOS transistor .

Công nghệ SOI tạo ra bóng bán dẫn MOS nhanh hơn .

4. The article introduced the principle and apply of the transistor avalanche through four example of transistor oscillator, avalanche oscillator, audio signal generator, flash metronome.

5. A method of forming cobalt-disilicide contacts on source/drain regions and a polysilicon gate electrode of an MOS transistor using a cobalt-carbon alloy thin film.

6. The memory updates and learning are bidirectional because the injection and tunneling mechanisms add and remove electrons from the floating gate, respectively.

7. In addition, the memory transistor has a gate-controlled memory effect.

8. According to said method, the clock signal (CLt, CLc) to be corrected is applied to the respective gate of the MOS transistor pair (T1, T2), and a differential analog pulse duty correction signal (DCt, DCc) is produced by respective integration of the true and complementary clock signal (ACLt, ACLc) emitted by every MOS transistor (T1, T2) of the differential amplifier (1) on its source/drain connection.

9. The processor elements are implemented as CMOS/neuron MOS threshold value logic elements or CMOS/NMOS pass transistor logic elements.

10. The cathode-end emitter region and the adjacent emitter region form the source and drain of a MOS field-effect transistor.

11. From the physical behaviour of MOS transistors four-terminal equations and equivalent circuit diagrams for a segment of an MOS transistor are derived which include the influence of the reverse biased depletion layer between channel and substrate and the finite output admittance of the short-channel saturated transistor.

12. Avalanche synonyms, Avalanche pronunciation, Avalanche translation, English dictionary definition of Avalanche

13. A gate structure for a vertical transistor is formed adjacent to a sidewall of the trench.

14. Besides MOS-based structures, additional work was carried out on junction gate field-effect transistors and Schottky barrier diodes.

15. The inverter (IC1) is a simple NAND gate (74LS00), but you may use a simple transistor instead.

16. Alternate bit line bias during programming to reduce channel-to-floating gate coupling in memory

17. In a preferred embodiment of the display device, the thin-film transistor has a bottom gate-type structure, and a gate electrode and scanning lines in the thin-film transistor comprise the Cu alloy film and are in direct contact with the glass substrate.

18. The chip size is prevented from increasing, and temperature dependence of a MOS transistor is compensated for while the power consumption is kept from increasing.

19. Gate oxides prepared by repeated rapid thermal Annealings of the thermal oxide in N2O ambient is proposed and metal–oxide–semiconductor (MOS) capacitors with these newly proposed gate dielectrics are studied

20. Both dopant regions are situated beneath a self -aligned tunneling window (240; 410) of the floating gate.

21. Gate oxides prepared by repeated rapid thermal Annealings of the thermal oxide in N 2 O ambient is proposed and metal–oxide–semiconductor (MOS) capacitors with these newly proposed gate dielectrics are studied

22. Avalanche: Avalanche is a free platform puzzle game

23. A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) are formed by patterning of a gate dielectric layer, a thin silicon layer, and a silicon-germanium alloy layer.

24. Adjustable mos resistor

25. The MOS Technology 6510 is an 8-bit microprocessor designed by MOS Technology.