Nghĩa của từ source-drain spacing bằng Tiếng Đức
source-drain spacing [sɔːsdreinspeisiŋ] Quelle-Senke-Abstand
Đặt câu có từ "source-drain spacing"
1. Field effect transistor structure with abrupt source/drain junctions
2. An oxide - nitride - oxide structure is formed above the substrate between the drain/source areas.
3. bay spacing
4. Acetabulum spacing device
5. The light-receiving element comprises: a light-receiving part for absorbing light; a source and a drain separated from the light-receiving part by means of an oxide layer; a channel which is formed between the source and the drain, and creates a flow of current between the source and the drain; and a sensitivity-adjusting terminal for applying a voltage to the light-receiving part.
6. Y-axis Grid Spacing
7. In tracing characteristic source-specific sub-populations of sediment passing through a river system the closest possible spacing of sieves may be required.
8. Spacing between footnote and body
9. Method for completely eliminating charge trap from the source (or drain) and the bulk region of a vertical transistor
10. This electrode here, called the gate, controls the flow of current from the source to the drain -- these two electrodes.
11. An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions.
12. Drain up kits (drain pumps) for air-conditioning apparatus
Ablasskits (Ablasspumpen) für Klimageräte
13. Plant Azaleas according to spacing recommendations
14. Synonyms for Arranging include arrangement, ordering, placing, positioning, spacing, spacing out, spreading out, disposition, placement and organization
15. If we choose to measure the spacing, the final error is proportional to the inverse of the spacing.
16. The cathode-end emitter region and the adjacent emitter region form the source and drain of a MOS field-effect transistor.
Die kathodenseitige Emitterzone und die benachbart liegende Emitterzone bilden Source und Drain eines MOS-Feldeffekttransistors.
17. The relationship between circulus spacing and absolute growth was linear (circulus spacing ( μm) = 0.528 times absolute growth (mm) - 9.57).
18. - Increasing brain drain.
19. Τhe drain system!
20. Minimum spacing between adjacent pantograph (if applicable)
Mindestabstand zwischen benachbarten Stromabnehmern (sofern zutreffend)
21. The invention relates to a transistor for analog switching functions comprising at least one source region, at least one drain region, a channel region arranged between the source region and the drain region, a gate dielectric arranged above the channel area, and a gate electrode arranged above the gate dielectric.
Erfindungsgemäß wird ein Transistor für analoge Schaltungsfunktionen mit zumindest einem Sourcebereich, zumindest einem Drainbereich, einem zwischen dem Sourcebereich und dem Drainbereich angeordneten Kanalbereich, einem über dem Kanalbereich angeordneten Gatedielektrikum und einer über dem Gatedielektrikum angeordneten Gateelektrode bereitgestellt.
22. The transistors are vertical transistors whose source/drain regions (S/Do) are located below the word lines (W) and between adjacent trenches.
Die Transistoren sind vertikale Transistoren, deren Source/Drain-Gebiete (S/Do) unter den Wortleitungen (W) und zwischen benachbarten Gräben angeordnet sind.
23. Current can flow between source and drain if a quantum dot energy level is aligned with the energy of incident tunneling electrons.
24. Their spacing is regular, a telltale mark that the flow field around each sea pen defines the optimum spacing of neighbors.
25. Current flow between source and drain is inhibited if no quantum dot energy level is aligned with the energy of incident tunneling electrons.