1. P-n junction-type compoud semiconductor light-emitting diode

2. The n-type semiconductor (A) has constituent units represented by formula (I) and the p-type semiconductor (B) has donor-acceptor constituent units.

3. The n-type semiconductor layer of a nitride group includes aluminum formed on the active layer.

4. An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region.

5. Cadmium Arsenide is a II-V semiconductor showing degenerate n-type semiconductor intrinsic conductivity with a large mobility, low effective mass and highly non parabolic conduction band, or a Narrow-gap semiconductor

6. The n-type ohmic electrode is provided to comprise an alloy of aluminum and lanthanum or comprises lanthanum at the junction interface with the n-type group III nitride semiconductor.

7. A semiconductor structure comprising (N) stacked junctions, each junction formed of a IV-VI semiconductor alloy and each of said N junctions having a bandgap, where N is an integer and N>1 is disclosed.

8. In semiconductor physics, an Acceptor is a dopant atom that when added to a semiconductor can form a p-type region

9. Phosphine(PHis an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition(CVD) etc.

10. Successive approximation type a/d converter circuit and semiconductor integrated circuit for control

11. The surface in the p - type - type semiconductor material at which the donor and acceptor concentration are equal.

12. Zinc oxide-based p-type semiconductor thin film using hydrogen, and method for manufacturing same

13. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

14. FFA type approved alc (y/n) ?

15. FFA type approved alc (y/n)?

16. Azine-based COFs are more active than the metal-free semiconductor g-C 3 N 4.

17. The absorption region includes a first type of semiconductor material (Ge) having a first refractive index.

18. The active layer of a nitride group includes aluminum formed on the p-type semiconductor layer.

19. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist essentially of a corresponding donor or acceptor material.

20. The semiconductor device is selected from a group including p-n junction diodes and Schottky barier diodes.

21. N-type acceptor materials derived from such compounds and devices comprising such n-type acceptor materials are also provided.

22. An electroabsorption modulator comprises an absorption layer (1) between two layers of n-doped semiconductor (2, 5).

23. N 7/498 . . . . using counter-type accumulators

24. It is a group V/VI, intrinsic p-type semiconductor and exhibits photo-induced phase-change properties.

25. "Semiconductor Engineering .:.

26. Substantiality nonfundamentalist geochronology osmometrically antipatriotic i-type semiconductor hyperspeculative Anticlassicalist semiphosphorescent preeducational sierra morena perikiromene unexasperated unaxiomatic overobedient

27. Method for producing a semiconductor, and semiconductor and electric element

28. Arbalest (n.) also arbalist, type of crossbow, c

29. FTX ACB: type of good: N, HS code

30. FTX ACB: type of good: ‘N’, HS code

31. Semiconductor nanoparticle aggregate and production method for semiconductor nanoparticle aggregate

32. 0-RFN1022-2SR2 Type-N Female Bulkhead Rear Mount, .141 Semi Rigid, RFI, 0-RFN1022-3 Type-N Female Bulkhead Chassis Connector, Long Front Mount, RFI, 0-RFN1022-SR1 Type-N Female Bulkhead Rear Mount, .085 Semi Rigid, RFI, 0-RFN1022-5 Type-N Female Bulkhead Chassis Connector, Front Mount W/D-Flat & O-Ring, RFI, NM-002 Type-N Male Bulkhead Connector, Back …

33. · Data type - The data type can be N (Numeric), A (Alpha) or AN (Alphanumeric).

34. In July 1959, he filed for U.S. Patent 2,981,877 "Semiconductor Device and Lead Structure", a type of integrated circuit.

35. Semiconductor device having trench wiring and process for fabricating semiconductor device

36. N-Type Attenuators; SMA Attenuators; View as Grid List

37. COUNTRY OF REGISTRATION | FFA TYPE APPROVED ALC (Y/N) ?

38. Microfluidic semiconductor sensor

39. The active layer includes a first N-type layer and a first P-type layer.

40. News Alpha and Omega Semiconductor Releases Automotive Qualified 1200V αSiC MOSFETs for Electric Vehicle Applicationsmore » News Alpha and Omega Semiconductor Introduces Application-Specific EZBuck™ Regulator to Power Intel Tiger Lake Platformmore » News Alpha and Omega Semiconductor Announces Type-C Power Delivery High Voltage Source

41. N Scale - Gray Trucks w/ Rapido Type Couplers (4 Pair)

42. Electron acceptor layer may be formed by patterning formable N-type material between a template and an electrode layer, and solidifying the formable N-type material.

43. Advanced semiconductor light sources

44. Adhesive film for semiconductor

45. Nido Borane is a type of Borane structure having the chemical formula B n H n+4

46. Aluminum alloy semiconductor packages

47. A(n) _____ is the simplest and Briefest type of business plan

48. FTX ACB: type of good: ‘N’, HS code of the good

49. FTX ACB: type of good: N, HS code of the good

50. Semiconductor technology leader Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology...

51. N-Type Fixed Attenuator 3 dB 5 W ATS-2M2F-03DB5W

52. N-Type Fixed Attenuator 6 dB 5 W ATS-2M2F-06DB5W

53. N-Type Fixed Attenuator 10 dB 5 W ATS-2M2F-10DB5W

54. The polydiorganosiloxane polyoxamide block copolymers are of the (AB)n type.

55. Also called: Acceptor impurity electronics an impurity, such as gallium, added to a semiconductor material to increase its p-type conductivity by …

56. Adhesive tape for assembling semiconductor

57. Under the Character Type Column: A = Alpha, N = Numeric, B = Binary

58. Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same

59. The gain-coupled distributed feedback semiconductor laser is of absorptive grating type, in which the resonance length is preferably 400 $g(m)m.

60. Advancing semiconductor materials growth processes

61. Producing advanced organic semiconductor devices

62. Flux activator, adhesive resin composition, adhesive paste, adhesive film, semiconductor device fabrication method, and semiconductor device

63. Shift electrodes forming a shift register are driven by negative electrical potentials and accumulations of holes in p type semiconductor material represent data.

64. Key for character type: N = Numeric; A = Alphabetic; AN = Alphanumeric; B = Binary

65. Adorability: 1 n extreme attractiveness Synonyms: adorableness Type of: attractiveness sexual allure

66. The helium ions generate acceptor-type states that lower effective n doping.

67. The importance of these complex at the possible implications that this type of interaction can take link activation processes, catalysis and the semiconductor industry.

68. Anthracene is an organic semiconductor

69. List of Semiconductor Simulation Applets

70. Abov Semiconductor is a leading designer and manufacturer of microcontrollers, advanced nonvolatile memory and various semiconductor solutions

71. Etching chamber for manufacturing semiconductor led

72. Vitesse Semiconductor Corp is the foundry.

73. The p-type ZnO is prepared by implanting low energy acceptor ions into an n-type ZnO substrate and annealing.

74. Advanced thermal processing of semiconductor materials

75. Adhesive film for a semiconductor package

76. Copper alloy bonding wire for semiconductor

77. Advanced probe pin for semiconductor test

78. 7 Computer, software and semiconductor companies advanced as Lam Research and Lattice Semiconductor announced profits surpassing analysts' estimates.

79. In addition, the second semiconductor material includes an alloy of the first semiconductor material with an alloying constituent.

80. One such method may include depositing a semiconductor layer (14) on a semiconductor substrate (12), depositing an adynamic diamond layer (16) on the semiconductor layer (14) opposite the semiconductor substrate (12), and coupling a support substrate (18) to the adynamic diamond layer (16) opposite the semiconductor layer (14) to support the adynamic layer.